CR10N65A9R/TND10N65 华晶代替

CR10N65A9R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220F, which accords with the RoHS standard.


Features：


Fast Switching
Low ON Resistance
Low Gate Charge
Low Reverse transfer capacitances
** Single Pulse avalanche energy Test


Applications：


Power switch circuit of adaptor and charger


深圳飞捷士科技核心服务


功率器件：代理华润微电子，特诺半导体


物联网：阿里巴巴IOT核心芯片分销合作伙伴


照明IC：立锜科技，美芯晟


MCU单片机：晟汐微，国民技术


CR10N65A9R是一种硅N沟道增强型vdmosfet，采用自对准平面工艺制备而成，降低了导通损耗，改善了开关性能，提高了雪崩能量。该晶体管可应用于各种功率开关电路中，使系统小型化、高效率。包装形式为TO-220AB，符合RoHS标准。


特征：


快速切换
低导通电阻
低门电荷
低反向转移电容
**单脉冲雪崩能量试验


应用：

适配器和充电器的电源开关电路